HY 3215

HY 3215 N-Channel Enhancement Mode MOSFET

HY 3215P/M/B/PS/PM Absolute Maximum Rati ngs Symbol Parameter Rating Common Ratings (TC=25°C Unless Otherwise Note d) VDSS Drain-Source Voltage VGSS Gate -Source Voltage TJ Maximum Junction Tem perature TSTG Storage Temperature Range IS Diode Continuous Forward Current Mo unted on Large Heat Sink TC=25°C 150 ±25 175 -55 to 175 120 IDM Pulsed Dr ain Current * ID Continuous Drain Curre nt PD Maximum Power Dissipation RθJC T hermal Resistance-Junction to Case RθJ A Thermal Resistance-Junction to Ambien t Avalanche Ratings TC=25°C TC=25°C TC=100°C TC=25°C TC=100°C 480** 120 84 300 150 0.
5 62.
5 EA .